中心博士生王静的工作——Toward photonic–electronic convergence based on heterogeneous platform of merging lithium niobate into silicon（面向光电融合的硅铌酸锂异质集成平台）的相关成果近期被Journal of the Optical Society of America B期刊接收发表，该工作得到了国家重点研发计划（2019YFB2203700）、国家自然科学基金（T2225023）的部分资助。随着摩尔定律逐渐失效，集成电路的发展面临严峻挑战，光子器件凭借着超大带宽、无需先进制程等优势可弥补电子器件的不足，因此光电融合成为后摩尔时代大势所趋。近年来，离子切、晶圆键合等先进工艺的快速发展促进了基于铌酸锂(LN)的光子集成的蓬勃发展。铌酸锂由于其优越的材料特性成为充满应用前景的集成光子平台，但它与传统互补金属氧化物半导体(CMOS)工艺的不兼容性以及较低的集成度阻碍了它的发展。尽管硅(Si)在光子集成方面的性能较差，但其作为光子器件的主要平台，具有小尺寸，高密度，低成本和高集成度的特点。因此可将薄膜铌酸锂嵌入硅平台中，形成异质Si/LN光子器件，同时发挥两种不同材料的优势，实现单片集成。本文从材料性质和异质集成的制备工艺切入；介绍了不同功能的异质集成光子器件；然后介绍了光电融合的研究进展；并且从硅基光电集成中获得灵感，展望了薄膜铌酸锂与硅结合在未来光电集成中的发展趋势；最后，对Si/LN异质集成当前研究现状和挑战进行总结讨论。
摘要: The rapid development of fabrication techniques has boosted the resurgence of integrated photonics based on lithium niobate (LN). While thin-film LN is available and has been a promising photonic platform owing to its superior material properties, it is held back by its non-compatibility with complementary metal-oxide-semiconductor (CMOS) processes and the lack of high-density scaling possibilities. Silicon (Si), despite its less favorable intrinsic properties, was the dominant platform for photonic devices with compact footprints, high density, low cost, and high volume. By embedding thin-film LN into the Si platform, heterogeneous Si/LN photonic devices can be integrated on the same chip, simultaneously leveraging the advantages of the two different materials. In parallel with the development of photonic devices, research in photonic–electronic integrated circuits (PEICs) has flourished. This review begins with the material properties of LN and fabrication approaches for heterogeneous integration. We then introduce various photonic devices involving different functionalities. After that, the advances in photonic–electronic convergence are presented. Taking inspiration from PEICs using Si, we envision the contribution of thin-film LN conjunct with Si in the future PEICs. Finally, some conclusions and challenges are discussed.