中心博士生王静的工作——Engineering a sandwiched Si/I/LNOI structure for 180-GHz-bandwidth electro-optic modulator with fabrication tolerances（实现具有180GHz带宽与工艺容忍度电光调制器的硅-氧化硅-铌酸锂结构设计）的相关成果近期被Optics Express期刊接收发表，该工作得到了国家重点研发计划（2019YFB2203700）、国家自然科学基金（T2225023）的部分资助。我们提出了一种Si/I/LNOI调制器。引入了氧化硅缓冲层，以调整电场和光场的性质。在固定的半波电压为3V的情况下，EO带宽达到了~180 GHz。其次，研究表明调制臂的损耗行为受氧化硅蚀刻的控制，这是平板辐射的破坏性干涉的结果。通过加工误差分析， Si/I/LNOI结构可以有效地弥补随机加工偏差引起的性能下降。因此，我们预计这项工作将发挥其在实际光子学集成中的潜力，并为实现可扩展的具有广泛操作的光子学集成电路铺平道路，如微波光子、太赫兹光子和光学计算。
摘要:Electro-optical modulators are essential for scalable photonic integrated circuits and are promising for many applications. The convergence of silicon (Si) and lithium niobate (LN) allows for a compact device footprint and large-scale integration of modulators. We propose a sandwiched Si/I/LNOI modulator for broad modulation with CMOS-compatible fabrication tolerances. There is a thin film SiO2 spacer sandwiched between Si and LN, which is engineered to tailor optical and electrical properties and enhance index matching. Moreover, the SiO2 spacer is also exploited to inhibit the radiation loss induced by mode coupling. The modulator shows a bandwidth of ∼180 GHz with a halfwave voltage of 3V. Such a device is considerably robust to the fabrication deviations, making it promising for massive and stable manufacturing.