中心博士生王静的工作——A heterogeneous silicon on lithium niobate modulator for ultra-compact and high-performance photonic integrated circuits（用于超紧凑高性能光子集成回路的异质硅-铌酸锂调制器）的相关成果近期被IEEE Photonic Journal期刊接收发表，该工作得到了国家重点研发计划（2019YFB2203700）、国家自然科学基金（61822508）的部分资助。我们提出了一种利用硅的高折射率和铌酸锂的优良电光特性的新型电光调制器。通过刻蚀硅波导可以获得高调制性能与高紧凑度的特性。根据理论计算和仿真，硅-铌酸锂波导支持0.7 μm 的波导边缘间隔和10 μm 的弯曲半径，其调制效率可以达到1.76 V⋅cm，带宽超过350 GHz。
摘要: We propose a heterogeneous silicon on lithium niobate (Si-LN) modulator which improves the compactness and modulating performance of large-scale photonic integrated circuits. Two types of configurations are employed on the Si-LN wafer for ultra-compact light-routing waveguides and high-performance light-modulating waveguides, respectively. The low loss taper transfers the optical modes between the two waveguides. In the heterogeneous Si-LN modulator, LN etching is nonessential and thus device processes are supported on a robust wafer. Our design analyzes the influence of the LN thickness on the performance. According to theoretical analysis and numerical simulation, the modulator supports a bend radius of 10 μm and edge-to-edge waveguide separation of 0.7 μm with respect to ∼1 cm beat length. When thickness of LN is 700 nm, the modulation efficiency reaches 1.76 V⋅cm and the bandwidth exceeds 350 GHz. This modulator is potentially suitable for ultra-compact, large-scale, high efficiency, and large bandwidth photonic integrated circuits (PICs).